Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

文件：1.98202 Mbytes 页数：3 Pages

TAYCHIPST

泰迪斯电子

Single Pole Single Throw - Normally Open

FEATURES Tungsten contacts for better load switching performance** Vacuum dielectric allows for make and/or break load switching Mounting options in any axis Threaded HV connections means easy installation

文件：119.33 Kbytes 页数：2 Pages

Sensata

森萨塔

丝印：G22；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and

文件：261.23 Kbytes 页数：8 Pages

RENESAS

瑞萨

丝印：G22；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G22；Package：SMB；Power Schottky diode

文件：259.99 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：G220P02；Package：DFN2/2-6L；P-Channel Enhancement Mode Power MOSFET

Description The G220P02D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：817.54 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G220P03D；Package：DFN3X3-8LDUAL；DUAL P-Channel Enhancement Mode Power MOSFET

Description The G220P03D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：709.35 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G220P03D；Package：SOP-8DUAL；DUAL P-Channel Enhancement Mode Power MOSFET

Description The G220P03S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：836.51 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

文件：1.98202 Mbytes 页数：3 Pages

TAYCHIPST

泰迪斯电子

SIDACs

SIDACs IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts

文件：84.13 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司