丝印：G2100；Package：VQFN-FCRLF；LMG2100R044 100V, 35A GaN Half-Bridge Power Stage

1 Features • Integrated 4.4mΩ half-bridge GaN FETs and driver • 90V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.3V and 5V input logic levels • Gate driver capable of u

文件：1.37641 Mbytes 页数：28 Pages

TI

德州仪器

丝印：G2102；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

文件：1.8245 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2102；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

文件：1.8245 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2102；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

文件：1.8245 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2102；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

文件：1.8245 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2102；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

文件：1.8245 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G2102；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

文件：1.8245 Mbytes 页数：75 Pages

TI

德州仪器

丝印：G210P06；Package：PPAK5-8L；Single P-Channel Enhancement Mode MOSFET

文件：722.92 Kbytes 页数：10 Pages

HUAYI

华羿微电

丝印：G210P06；Package：TO-252-2L；P-Channel Enhancement Mode MOSFET

文件：1.32129 Mbytes 页数：11 Pages

HUAYI

华羿微电

丝印：G210P06；Package：TO-251-3L；P-Channel Enhancement Mode MOSFET

文件：1.32129 Mbytes 页数：11 Pages

HUAYI

华羿微电