丝印：G20N60C3D；Package：TO-247；45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

文件：82.71 Kbytes 页数：7 Pages

Intersil

丝印：G20N60C3D；Package：TO-247；45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

文件：123.08 Kbytes 页数：8 Pages

Fairchild

仙童半导体

丝印：G20N60C3；Package：TO-220AB；45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

文件：81.67 Kbytes 页数：7 Pages

Intersil

丝印：G20N60HS；Package：PG-TO-220-3-1；High Speed IGBT in NPT-technology

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:    - parallel switching capability    - moderate Eoff increase with temperature    -

文件：426.22 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：G20N60HS；Package：PG-TO-247-3；High Speed IGBT in NPT-technology

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:    - parallel switching capability    - moderate Eoff increase with temperature    -

文件：426.22 Kbytes 页数：11 Pages

Infineon

英飞凌

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately • 40A, 600V at TC = 25℃\n• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150℃\n• Short Circuit Rated\n• Low Conduction Loss\n• Hyperfast Anti-Parallel Diode;

ONSEMI

安森美半导体

45A, 600V, UFS Series N-Channel IGBT

ONSEMI

安森美半导体