Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件：364.5 Kbytes 页数：12 Pages

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Fast S-IGBT in NPT-technology

Fast S-IGBT in NPT-technology• 75% lower Eoff compared to previous generation combined with\n   low conduction losses\n• Short circuit withstand time – 10 µs\n• Designed for:\n   - Motor controls\n   - Inverter\n• NPT-Technology for 600V applications offers:\n   - very tight parameter distributi

Infineon

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丝印：G20N60；Package：PG-TO-220-3-1；Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件：364.5 Kbytes 页数：12 Pages

INFINEON

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丝印：G20N60；Package：PG-TO-247-3；Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件：364.5 Kbytes 页数：12 Pages

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40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

文件：179.52 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

文件：179.52 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

文件：144.01 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

High Speed IGBT in NPT-technology

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:    - parallel switching capability    - moderate Eoff increase with temperature    -

文件：426.22 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：G20N60C3；Package：TO-263AB；45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

文件：81.67 Kbytes 页数：7 Pages

INTERSIL

丝印：G20N60C3；Package：TO-247；45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

文件：81.67 Kbytes 页数：7 Pages

INTERSIL