Power MOSFET

文件：198 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode

Description\nThe IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only\nmoder • 20A, 500V\n• Latch Free Operation\n• Typical Fall Time < 500ns\n• High Input Impedance\n• Low Conduction Loss\n• With Anti-Parallel Diode\n•tRR< 60ns;

Renesas

瑞萨

500V N-Channel MOSFET

文件：337.05 Kbytes 页数：7 Pages

SEMIHOW

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：635.97 Kbytes 页数：6 Pages

HUASHAN

华汕电子器件

500V N-Channel MOSFET

文件：792 Kbytes 页数：7 Pages

HMSEMI

华之美半导体