G20N50C1D中文资料20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode数据手册Renesas规格书
G20N50C1D规格书详情
描述 Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only
moderately between +25°C and +150°C. The diode used in parallel with the IGBT is an ultrafast (tRR< 60ns) with soft recovery characteristic.
特性 Features
• 20A, 500V
• Latch Free Operation
• Typical Fall Time < 500ns
• High Input Impedance
• Low Conduction Loss
• With Anti-Parallel Diode
•tRR< 60ns
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
TO3P |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
询价 | ||
HARRIS |
24+ |
TO-3P |
4 |
询价 | |||
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | ||||
INFINEON英飞凌 |
25+ |
TO-3P |
18000 |
原厂直接发货进口原装 |
询价 | ||
VISHAY/威世 |
24+ |
TO-247 |
39197 |
郑重承诺只做原装进口现货 |
询价 | ||
INFINEON |
25+23+ |
TO3P |
46472 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
INFINEON/英飞凌 |
2223+ |
TO-3P |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
INFINEON英飞凌 |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-247 |
18000 |
原装正品 |
询价 |
