20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode

Description\nThe IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only\nmoder • 20A, 500V\n• Latch Free Operation\n• Typical Fall Time < 500ns\n• High Input Impedance\n• Low Conduction Loss\n• With Anti-Parallel Diode\n•tRR< 60ns;

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20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mod

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15A, 20A, 400V and 500V N-Channel IGBTs

Description The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor dri

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20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Description The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete antiparallel diod

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