G20N120E2中文资料34A, 1200V N-Channel IGBT数据手册Renesas规格书
G20N120E2规格书详情
描述 Description
The HGTG20N120E2 is a MOS gated, high voltage switch ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
特性 Features
34A, 1200V
Latch Free Operation
Typical Fall Time - 780ns
High Input Impedance
Low Conduction Loss
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
门市 |
25+ |
91 |
60 |
原装正品,假一罚十! |
询价 | ||
FAIRCHILD/仙童 |
24+ |
NA/ |
2100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
VISHAY原装 |
25+23+ |
TO-247 |
24543 |
绝对原装正品全新进口深圳现货 |
询价 | ||
HARRIS |
24+ |
TO-3P |
4 |
询价 | |||
VISHAY |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
INFINEON英飞凌 |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
询价 | ||
Vishay(威世) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
23+ |
TO-3P |
65480 |
询价 | ||||
Vishay(威世) |
2511 |
36000 |
电子元器件采购降本 30%!原厂直采,砍掉中间差价 |
询价 | |||
SANYO |
0214+ |
TO-252 |
354 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
