Rack and Panel Connectors Side Mount

FEATURES • Body components available with any desired pin and socket combination • Floating contacts aid in withstanding vibration • Locking device permits secure mount of individual sections or complete component MATERIAL SPECIFICATIONS Standard Body: Glass-filled diallyl phthalate per A

文件：131.91 Kbytes 页数：2 Pages

VishayVishay Siliconix

威世威世科技公司

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

文件：1.98202 Mbytes 页数：3 Pages

TAYCHIPST

泰迪斯电子

丝印：G16；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1590, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The MOSFET has excellent switching characteristics and is suitable for use as a high-speed switching d

文件：455.06 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：G16；Package：DSBGA；LM48821 Direct Coupled, Ultra Low Noise, 52mW Differential Input Stereo Headphone Amplifier with I2C Volume Control

1FEATURES 2• Ground Referenced Outputs • Differential Inputs • I2C Volume and Mode Controls • Available in Space-Saving DSBGA Package • Ultra Low Current Shutdown Mode • Advanced Output Transient Suppression Circuitry Eliminates Noises During Turn-On and Turn-Off Transitions • 2.0V to 4.0

文件：628.68 Kbytes 页数：23 Pages

TI

德州仪器

丝印：G16；Package：DSBGA；LM48821 Direct Coupled, Ultra Low Noise, 52mW Differential Input Stereo Headphone Amplifier with I2C Volume Control

1FEATURES 2• Ground Referenced Outputs • Differential Inputs • I2C Volume and Mode Controls • Available in Space-Saving DSBGA Package • Ultra Low Current Shutdown Mode • Advanced Output Transient Suppression Circuitry Eliminates Noises During Turn-On and Turn-Off Transitions • 2.0V to 4.0

文件：628.68 Kbytes 页数：23 Pages

TI

德州仪器

丝印：G16；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G16N03；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0664 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G16P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：625.64 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G16P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G16P03D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：961.98 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G16P03；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G16P03S uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

文件：1.06438 Mbytes 页数：6 Pages

GOFORD

谷峰半导体