Rack and Panel Connectors Side Mount

FEATURES • Body components available with any desired pin and socket combination • Floating contacts aid in withstanding vibration • Locking device permits secure mount of individual sections or complete component MATERIAL SPECIFICATIONS Standard Body: Glass-filled diallyl phthalate per A

文件：131.91 Kbytes 页数：2 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

文件：1.98202 Mbytes 页数：3 Pages

TAYCHIPST

泰迪斯电子

丝印：G16；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1590, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The MOSFET has excellent switching characteristics and is suitable for use as a high-speed switching d

文件：455.06 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：G16；Package：DSBGA；LM48821 Direct Coupled, Ultra Low Noise, 52mW Differential Input Stereo Headphone Amplifier with I2C Volume Control

1FEATURES 2• Ground Referenced Outputs • Differential Inputs • I2C Volume and Mode Controls • Available in Space-Saving DSBGA Package • Ultra Low Current Shutdown Mode • Advanced Output Transient Suppression Circuitry Eliminates Noises During Turn-On and Turn-Off Transitions • 2.0V to 4.0

文件：628.68 Kbytes 页数：23 Pages

TI

德州仪器

丝印：G16；Package：DSBGA；LM48821 Direct Coupled, Ultra Low Noise, 52mW Differential Input Stereo Headphone Amplifier with I2C Volume Control

1FEATURES 2• Ground Referenced Outputs • Differential Inputs • I2C Volume and Mode Controls • Available in Space-Saving DSBGA Package • Ultra Low Current Shutdown Mode • Advanced Output Transient Suppression Circuitry Eliminates Noises During Turn-On and Turn-Off Transitions • 2.0V to 4.0

文件：628.68 Kbytes 页数：23 Pages

TI

德州仪器

丝印：G16；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

文件：1.98202 Mbytes 页数：3 Pages

TAYCHIPST

泰迪斯电子

GOLD BONDED, GERMANIUM DIODE

JEDEC DO-7 PACKAGE

文件：356.86 Kbytes 页数：11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Ultrafast IGBT

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed

文件：662.13 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

丝印：G16N03；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0664 Mbytes 页数：6 Pages

GOFORD

谷峰半导体