G16

Silicon Z?밆iodes

FEATURES •Highreliability •Voltagerange10Vto270VFitsonto5mmSMDfootpads •Waveandreflowsolderable •Glasspassivatedjunction

G16

Rack and Panel Connectors Side Mount

FEATURES •Bodycomponentsavailablewithanydesiredpinand socketcombination •Floatingcontactsaidinwithstandingvibration •Lockingdevicepermitssecuremountofindividualsections orcompletecomponent MATERIALSPECIFICATIONS StandardBody:Glass-filleddiallylphthalateperA

G160

Silicon Z?밆iodes

FEATURES •Highreliability •Voltagerange10Vto270VFitsonto5mmSMDfootpads •Waveandreflowsolderable •Glasspassivatedjunction

G1607

GOLD BONDED, GERMANIUM DIODE

JEDECDO-7PACKAGE

G160N60

Ultrafast IGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeed

G160N60

Ultrafast IGBT; • High speed switching\n• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A\n• High input impedance\n• CO-PAK, IGBT with FRD: trr = 75nS (typ.)Applications\n   AC & DC motor controls, general purpose inverters, robotics,\n   servo controls, and power supplies.;

General Description\nFairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.\nThe UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

G16N03S

丝印：G16N03；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description TheG16N03Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G16P03D3

丝印：G16P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG16P03D3usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G16P03D3A

丝印：G16P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG16P03D3Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G16P03S

丝印：G16P03；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description TheG16P03Susesadvancedtrenchtechnologytoprovide excellentR DS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application  Powerswitch DC/DCconverters