True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz

1.1 Features Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high speed (0.03125 μs: @ 32 MHz

文件：3.45818 Mbytes 页数：207 Pages

RENESAS

瑞萨

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

文件：1.98202 Mbytes 页数：3 Pages

TAYCHIPST

泰迪斯电子

5 current ratings

文件：3.18497 Mbytes 页数：3 Pages

CHERRY

丝印：G13；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1580 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply. As the 2SK1580 is driven by low voltage and does not require consideration of driving current, it is suitable for appliance including VCR cameras and hea

文件：327.47 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：G13；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G130N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The G130N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：969.35 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G130N06；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G130N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06846 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G130N06D；Package：SOP-8Dual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G130N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.5 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G135P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G135P04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：966.83 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G135P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G135P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：912.34 Kbytes 页数：6 Pages

GOFORD

谷峰半导体