G13

Silicon Z?밆iodes

FEATURES •Highreliability •Voltagerange10Vto270VFitsonto5mmSMDfootpads •Waveandreflowsolderable •Glasspassivatedjunction

G13

True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz

1.1Features Ultra-lowpowerconsumptiontechnology VDD=singlepowersupplyvoltageof1.6to5.5V HALTmode STOPmode SNOOZEmode RL78CPUcore CISCarchitecturewith3-stagepipeline Minimuminstructionexecutiontime:Canbechanged fromhighspeed(0.03125μs:@32MHz

G13

5 current ratings

G130

SIDACs

SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts

G130

Silicon Z?밆iodes

FEATURES •Highreliability •Voltagerange10Vto270VFitsonto5mmSMDfootpads •Waveandreflowsolderable •Glasspassivatedjunction

G130

SIDACs

SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts

G130N06M

Marking：G130N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description TheG130N06Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G130N06S

Marking：G130N06；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description TheG130N06Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G130N06S2

Marking：G130N06D；Package：SOP-8Dual；DUAL N-Channel Enhancement Mode Power MOSFET

Description TheG130N06S2usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G133G

L-BAND SPDT SWITCH

DESCRIPTION UPG133GisanL-BandSPDT(SinglePoleDoubleThrow)GaAsFETswitchwhichwasdevelopedfordigitalcellularorcordlesstelephoneapplication. Thedevicecanoperatefrom100MHzto2.5GHz,havingthelowinsertionloss. Ithousedinanoriginal8pinSSOPthatissmallerthanus