G100N04T

Marking：G100N04；Package：TO-220；PWM applications

Description TheG100N04Tusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●PWM ●LoadSwitching

GT100N04K

N-ChannelEnhancementModePowerMOSFET

Description TheGT100N04Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

KDF100N04P

N-Channel4-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested APPLICATIONS •SynchronousRectification •PowerSupplies

NP100N04MDH

ProductScoutAutomotive

NP100N04MDH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NP100N04MUH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NP100N04MUH

ProductScoutAutomotive

NP100N04NDH

ProductScoutAutomotive

NP100N04NDH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NP100N04NUH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.