HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) ................................................ 0.53Ω • ID ...................................................................... –6A • Integrated Fast Recovery Dio

文件：50.5 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 150 V • rDS(ON) (max) : 0.53 Ω • ID : – 6 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns

文件：209.1 Kbytes 页数：7 Pages

RENESAS

瑞萨

Power MOSFETs

Renesas

瑞萨

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 150 V • rDS(ON) (max) : 0.53 Ω • ID : – 6 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns

文件：209.1 Kbytes 页数：7 Pages

RENESAS

瑞萨