FX6KMJ-3

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS.............................................................–150V •rDS(ON)(MAX)................................................0.53Ω •ID......................................................................–6A •IntegratedFastRecoveryDio

FX6KMJ-3

High-Speed Switching Use Pch Power MOS FET

Features •Drivevoltage:4V •VDSS:–150V •rDS(ON)(max):0.53Ω •ID:–6A •RecoveryTimeoftheIntegratedFastRecoveryDiode(TYP.):100ns

FX6KMJ-3-A8

High-Speed Switching Use Pch Power MOS FET

Features •Drivevoltage:4V •VDSS:–150V •rDS(ON)(max):0.53Ω •ID:–6A •RecoveryTimeoftheIntegratedFastRecoveryDiode(TYP.):100ns