N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • 2.5V drive. • Composite type, facilitating high-density mounting.

文件：39.02 Kbytes 页数：4 Pages

SANYO

三洋

Load Switching Applications

Load Switching Applications Features • Low ON resistance. • 4V drive.

文件：43.21 Kbytes 页数：4 Pages

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三洋

Load Switching Applications

Load Switching Applications Features • Low ON-resistance. • 2.5V drive.

文件：42.72 Kbytes 页数：4 Pages

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三洋

Load Switching Applications

Load Switching Applications Features • Low ON-resistance. • 4V drive.

文件：28.62 Kbytes 页数：4 Pages

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DC/DC Converter Applications

DC/DC Converter Applications Features • Low ON resistance. • 4V drive.

文件：42.25 Kbytes 页数：4 Pages

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DC / DC Converter Applications

Features • Low ON-resistance. • 4V drive. • Ultrahigh-speed switching.

文件：32.77 Kbytes 页数：4 Pages

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N CHANNEL MOS SILICON TRANSISTOR

N-Channel Silicon MOSFET Features • Motor drive. • 4V drive.

文件：55.32 Kbytes 页数：4 Pages

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isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 5000(Min)@ IC= -2A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for linear and switching industrial equipme

文件：274.61 Kbytes 页数：2 Pages

ISC

无锡固电

PNP POWER DARLINGTON TRANSISTOR

DESCRIPTION The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications. • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION

文件：35.52 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

N CHANNEL MOS SILICON TRANSISTOR

N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive.

文件：34.62 Kbytes 页数：2 Pages

SANYO

三洋