isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 5000(Min)@ IC= -2A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for linear and switching industrial equipme

文件：274.61 Kbytes 页数：2 Pages

ISC

无锡固电

PNP POWER DARLINGTON TRANSISTOR

DESCRIPTION The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications. • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION

文件：35.52 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

PNP POWER DARLINGTON TRANSISTOR

ST

意法半导体

INTEL(英特尔)

INTEL(英特尔)

上传：深圳市盈慧通电子有限公司

INTEL(英特尔)

INTEL(英特尔)

上传：深圳市盈慧通电子有限公司