FU-636SDF-F1M1资料datasheet下载供应代理第2页-114ic电子网

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ADG636	文件：147.68 Kbytes Page：12 Pages	1pCChargeInjection,100pALeakageCMOS5V/5V/3VDualSPDTSwitch GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG636	文件：498.96 Kbytes Page：16 Pages	1pCChargeInjection,100pALeakage	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG636YRU	文件：147.68 Kbytes Page：12 Pages	1pCChargeInjection,100pALeakageCMOS5V/5V/3VDualSPDTSwitch GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG636YRU	文件：498.96 Kbytes Page：16 Pages	1pCChargeInjection,100pALeakage,CMOS,짹5V/5V/3VDualSPDTSwitch GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG636YRU-REEL	文件：498.96 Kbytes Page：16 Pages	1pCChargeInjection,100pALeakage,CMOS,짹5V/5V/3VDualSPDTSwitch GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
AL-HG636A	文件：338.41 Kbytes Page：5 Pages	GreenSMDChipLEDLamps(0.6mmHeight)	A-BRIGHTA-BRIGHT Inc 光旗实业光旗实业股份有限公司	A-BRIGHT
AL-HG636D	文件：339.61 Kbytes Page：5 Pages	GreenSMDChipLEDLamps(0.8mmHeight)	A-BRIGHTA-BRIGHT Inc 光旗实业光旗实业股份有限公司	A-BRIGHT
AT636	文件：44.07 Kbytes Page：4 Pages	PHASECONTROLTHYRISTOR PHASECONTROLTHYRISTOR Repetitivevoltageupto1800V Meanon-statecurrent1965A Surgecurrent36kA	POSEICO Power Semiconductors	POSEICO
ATS636LSE	文件：814.15 Kbytes Page：15 Pages	ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O	Allegro Allegro MicroSystems	Allegro
ATS636LSETN-T	文件：814.15 Kbytes Page：15 Pages	ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O	Allegro Allegro MicroSystems	Allegro
ATS636LSETN-T	文件：348.67 Kbytes Page：15 Pages	TheATS636LSEprogrammable,truepower-onstate(TPOS),deviceisoptimizedHall-effectICandrare-earthpelletcombinationsthatswitchinresponsetomagneticsignals...	Allegro Allegro MicroSystems	Allegro
BC636	文件：1.9422 Mbytes Page：14 Pages	GERMANIOVETRANZISTORY	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BC636	文件：721.21 Kbytes Page：4 Pages	TO-92Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES Highcurrenttransistors	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU
BC636	文件：2.43533 Mbytes Page：31 Pages	SEMICONDUCTORS	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2
BC636	文件：121.16 Kbytes Page：5 Pages	SILICONPLANAREPITAXIALTRANSISTORS SILICONPLANAREPITAXIALTRANSISTORS HighCurrentTransistor	CDIL CDIL	CDIL
BC636	文件：56.7 Kbytes Page：4 Pages	HighCurrentTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BC636	文件：116.45 Kbytes Page：4 Pages	HighCurrentTransistors HighCurrentTransistorsPNPSilicon	MotorolaMotorola, Inc 摩托罗拉	Motorola
BC636	文件：86.61 Kbytes Page：4 Pages	HighCurrentTransistors(PNPSilicon) HighCurrentTransistorsPNPSilicon	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BC636	文件：43.92 Kbytes Page：8 Pages	PNPmediumpowertransistors DESCRIPTION PNPmediumpowertransistorinaTO-92;SOT54plasticpackage.NPcomplements:BC635,BC637andBC639. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Audioandvideoamplifiers.	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BC636	文件：126.87 Kbytes Page：5 Pages	PNPSiliconAFTransistors(HighcurrentgainHighcollectorcurrent) PNPSiliconAFTransistors ●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC635,BC637,BC639(NPN)	SIEMENSSiemens Ltd 西门子德国西门子股份公司	SIEMENS

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详细参数

型号：
FU-636SDF
制造商：
MITSUBISHI
制造商全称：
Mitsubishi Electric Semiconductor
功能描述：
1.55 um DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	FU-636SDF-F1M1	MITSUBISHI	23+	NA	25060	只做进口原装,终端工厂免费送样	询价
贸泽芯城（深圳）电子科技有限公司	FU-636SDF-FW41M60	MITSUBISHI SEMICONDUCTOR	21+ROHS	IGBT	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市一线半导体有限公司	FU-63T	KEYEBCE		DIP	9		询价
中天科工半导体（深圳）有限公司	FU-63Z	KEYENCE基恩	20+	标准	88720	红外全新原装主营-可开原型号增税票	询价
北京光敏源科技有限公司	FU-63Z	KEYENCE基恩士	2021+		1000	只做原装，可提供样品	询价
千层芯半导体(深圳)有限公司	FU-644SLD-1PRL5	MIT	2018+	SMD	20000	一级代理原装现货假一罚十	询价
深圳市粤骏腾电子科技有限公司	FU-644SLD-1PRL5	MIT	23+		202	大批量供应优势库存热卖	询价
深圳兆威电子有限公司	FU-645SDF-V1M1B	MITSUBI	20		90000	原装正品,假一赔十	询价
深圳市百诺芯科技有限公司	FU-64SLD-9	NEC	23+	TO-59	8510	原装正品代理渠道价格优势	询价
深圳市惊羽科技有限公司	FU-64SLD-9	NEC-日本电气	24+25+/26+27+	TO-59.高频管	18800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价

更多FU-636SDF供应商更新时间2024-6-19 9:02:00

详细参数

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