FTU04N60BG数据表ic资料供应代理开阳电子-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FTU04N60BG	文件：300 bytes Page：1 Pages	增强型MOSFET	ARKmicro 开阳电子	ARKmicro
H04N60	文件：60.85 Kbytes Page：5 Pages	N-Channel Power Field Effect Transistor Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl 文件：60.85 Kbytes 页数：5 Pages	HSMC 华昕	HSMC
H04N60E	文件：60.85 Kbytes Page：5 Pages	N-Channel Power Field Effect Transistor Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl 文件：60.85 Kbytes 页数：5 Pages	HSMC 华昕	HSMC
H04N60F	文件：60.85 Kbytes Page：5 Pages	N-Channel Power Field Effect Transistor Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl 文件：60.85 Kbytes 页数：5 Pages	HSMC 华昕	HSMC

更多FTU04N60B供应商更新时间2025-11-6 16:07:00