丝印：Q4614YY；Package：SOP8；Super High Density Cell Design for Extremely Low RDS(ON)

文件：477.74 Kbytes 页数：5 Pages

FS

MOS FET:Low Voltage

First Silicon

N and P Channel Enhancement Mode Power MOSFET

Description The G4614 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：946.17 Kbytes 页数：10 Pages

GOFORD

谷峰半导体

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：1.36717 Mbytes 页数：5 Pages

HMSEMI

华之美半导体

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) RDS(ON)

文件：2.26095 Mbytes 页数：7 Pages

KEXIN

科信电子