丝印：Q4435；Package：SOP-8；High Power and current handing capability

文件：461.9 Kbytes 页数：4 Pages

FS

MOS FET:Low Voltage

First Silicon

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：159.57 Kbytes 页数：6 Pages

DIODES

美台半导体

Mini size of Discrete semiconductor elements

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ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

P-Channel Enhancement-Mode MOSFET

Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency

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GE