IRF3710ZPBF

AdvancedProcessTechnology

IRF3710ZS

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF3710ZS

AdvancedProcessTechnologyUltraLowOn-Resistance

IRF3710ZS

IscN-ChannelMOSFETTransistor

IRF3710ZSPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr

IRFI3710

HEXFETPowerMOSFET

Through-HolePackags TO-220FullPak(FullyIsolated)

IRFN3710

TRANSISTORN-CHANNEL(BVdss=100V,Rds(on)=0.028ohm,Id=45A)

100Volt,0.028Ω,HEXFET Generation5HEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETsarewellknown,prov

IRFN3710

N?밅HANNELPOWERMOSFET

IRFP3710

PowerMOSFET(Vdss=100V,Rds(on)=0.025W,Id=57A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFP3710

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FullyAvalancheRated •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤25mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation