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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
IRF3710Z	文件：270.17 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp	IRF International Rectifier	IRF
IRF3710Z	文件：4.63191 Mbytes Page：12 Pages	AdvancedProcessTechnologyUltraLowOn-Resistance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF3710Z	文件：339.41 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRF3710Z	文件：1.13608 Mbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET Description TheIRF3710Zusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgat echarge.Itcanbeusedinawidevarietyof applications. GeneralFeatures VDS=100V,ID=60A RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体	EVVOSEMI
IRF3710ZGPBF	文件：293.92 Kbytes Page：9 Pages	AdvancedProcessTechnology VDSS=100V RDS(on)=18mΩ ID=59A Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimproved	IRF International Rectifier	IRF
IRF3710ZL	文件：270.17 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp	IRF International Rectifier	IRF
IRF3710ZL	文件：4.63191 Mbytes Page：12 Pages	AdvancedProcessTechnologyUltraLowOn-Resistance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF3710ZL	文件：301.06 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRF3710ZLPBF	文件：323.95 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr	IRF International Rectifier	IRF
IRF3710ZPBF	文件：323.95 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr	IRF International Rectifier	IRF

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市南科功率半导体有限公司	FTK3710	NK/南科功率	2025+	SOP-8	986966	国产	询价
贸泽芯城（深圳）电子科技有限公司	FTK3810	FIRSTSILICON	23+	SOP-8	3069	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价

更多FTK3710供应商更新时间2025-7-22 14:01:00

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