丝印：818B；Package：SOT-23-6L；TRANSISTOR (PNP)

DESCRIPTIONS The device is manfactured in low voltage PNP Planar Technology with “Base Island ” layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. FEATURE Very low collector to emitter saturation voltage APPLICATIONS ● Power m

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FS

TRANSISTOR:Genreal Purpuse

First Silicon

Integrated Circuit TV Luminance Processor

Description: A single DC picture control adjusts the gain of both the low–level video and chroma amplification in color TV receivers which employ the NTE818Luminance Processor. Automatic brightness limiting (ABL) and vertical maintaining a constant black level. During the horizontal blanking inte

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NTE

High Density Mounting Type Photocoupler

PC817X Seriescontains an IRED optically coupled to a phototransistor. ( PC817A, PC817B, PC817C, PC817D ) It is packaged in a 4pin DIP, available in wide-lead spacing option and SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV.Collector-emitter voltage is 80V(*) and CTR i

文件：66.42 Kbytes 页数：4 Pages

SHARPSharp Corporation

夏普

HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR

Description The device is manufactured in low voltage PNP Planar Technology with Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC current gain > 100 (h

文件：142.49 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体