5 A、60 V 低 VF 肖特基壁垒整流器

• 低正向压降\n• 较低热阻\n• 极薄的外形： 典型高度为 1.1 mm\n• 符合 RoHS 标准\n• 根据 IEC61249 标准，采用绿色模塑化合物\n• 遵循 EU RoHS 2011/65/EU 无铅指令;

ONSEMI

安森美半导体

丝印：FSV560；Package：TO-277-3LD；Schottky Barrier Rectifier 5 A, 60 V Low VF

Features • Low Forward Voltage Drop • Low Thermal Resistance • Very Low Profile: Typical Height of 1.1 mm • Green Molding Compound as per IEC61249 Standard • Non−DAP Option Only • These Devices are Pb−Free, Halogen Free and are RoHS Compliant

文件：191.5 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Package：TO-277，3-PowerDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 60V 5A TO277-3

ONSEMI

安森美半导体

PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt

文件：41.07 Kbytes 页数：2 Pages

ZETEX

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features • BVCEO > -500V • IC = -150mA High Continuous Current • ICM = -500mA Peak Pulse Current • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP Capable (Note 4)

文件：52.49 Kbytes 页数：2 Pages

DIODES

美台半导体

500V PNP HIGH VOLTAGE TRANSISTOR IN SOT223

Features • BVCEO > -500V • IC = -150mA High Continuous Current • ICM = -500mA Peak Pulse Current • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP Capable (Note 4)

文件：512.98 Kbytes 页数：7 Pages

DIODES

美台半导体