型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
Load Switching Applications Load Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. 文件:28.25 Kbytes 页数:4 Pages | SANYO 三洋 | SANYO | ||
DC/DC Converter Applications DC/DC Converter Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive. 文件:42.03 Kbytes 页数:4 Pages | SANYO 三洋 | SANYO | ||
DC/DC Converter Applications DC/DC Converter Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive. 文件:72.13 Kbytes 页数:4 Pages | SANYO 三洋 | SANYO | ||
Load Switching Applications Load Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. 文件:28.6 Kbytes 页数:4 Pages | SANYO 三洋 | SANYO | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:71.31 Kbytes 页数:8 Pages | Intersil | Intersil | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:71.31 Kbytes 页数:8 Pages | Intersil | Intersil | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:71.31 Kbytes 页数:8 Pages | Intersil | Intersil | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:71.31 Kbytes 页数:8 Pages | Intersil | Intersil | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:71.31 Kbytes 页数:8 Pages | Intersil | Intersil | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:71.31 Kbytes 页数:8 Pages | Intersil | Intersil |
技术参数
- IF(AV) (A):
1
- VRRM (V):
30
- TRR (ns):
>10
- Vf (V):
0.50
- IFSM (A):
30
- Outline:
DO214AC/SMA
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAGOR |
23+ |
DO214ACSMA |
7600 |
专注配单,只做原装进口现货 |
询价 | ||
SANYO |
17+ |
SO8 |
6200 |
100%原装正品现货 |
询价 | ||
SANYO |
13+ |
SOP |
11258 |
原装分销 |
询价 | ||
SANYO |
SOP8 |
788 |
正品原装--自家现货-实单可谈 |
询价 | |||
SANYO |
24+ |
SOP-8 |
7200 |
新进库存/原装 |
询价 | ||
SANYO |
02+ |
SOP8 |
2600 |
全新原装进口自己库存优势 |
询价 | ||
SANYO |
25+ |
SOP8 |
367 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
SANYO |
23+ |
SOP8 |
5000 |
原装正品,假一罚十 |
询价 | ||
SANYO |
24+ |
SOP8P |
6980 |
原装现货,可开13%税票 |
询价 | ||
SANYO |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
询价 |
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