FSL130D1技术资料参数库存现货亚德诺-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FSL130D1	文件：45.97 Kbytes Page：8 Pages	8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件：45.97 Kbytes 页数：8 Pages	Intersil	Intersil
FSS130D1	文件：45.08 Kbytes Page：8 Pages	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi 文件：45.08 Kbytes 页数：8 Pages	Intersil	Intersil
ADuM130D1BRWZ	文件：649.35 Kbytes Page：22 Pages	3.0 kV RMS/3.75 kV RMS Triple-Channel Digital Isolators 文件：649.35 Kbytes 页数：22 Pages	AD 亚德诺	AD
ADuM130D1BRWZ-RL	文件：649.35 Kbytes Page：22 Pages	3.0 kV RMS/3.75 kV RMS Triple-Channel Digital Isolators 文件：649.35 Kbytes 页数：22 Pages	AD 亚德诺	AD
ADuM130D1BRZ	文件：649.35 Kbytes Page：22 Pages	3.0 kV RMS/3.75 kV RMS Triple-Channel Digital Isolators 文件：649.35 Kbytes 页数：22 Pages	AD 亚德诺	AD

更多FSL130D1供应商更新时间2025-9-26 17:21:00