55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

文件：66.24 Kbytes 页数：8 Pages

INTERSIL

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suite

文件：72.59 Kbytes 页数：8 Pages

INTERSIL

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suite

文件：74.86 Kbytes 页数：8 Pages

INTERSIL

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

文件：51.81 Kbytes 页数：8 Pages

INTERSIL