Primary-Side-Regulation PWM POWER MOSFET Integrated

文件：673.99 Kbytes 页数：17 Pages

ONSEMI

安森美半导体

Primary-Side-Regulation PWM POWER MOSFET Integrated

文件：673.99 Kbytes 页数：17 Pages

ONSEMI

安森美半导体

集成了功率 MOSFET 的初级侧调节 PWM

This third-generation Primary Side Regulation (PSR) and highly integrated PWM controller provides several features to enhance the performance of low-power flyback converters. The proprietary topology, TRUECURRENT®, of FSEZ1317WA enables precise CC regulation and simplified circuit design for battery • Low Standby Power Under 30mW\n• High-Voltage Startup\n• Fewest External Component Counts\n• Constant-Voltage (CV) and Constant-Current (CC) Control without Secondary-Feedback Circuitry\n• Green-Mode: Linearly Decreasing PWM Frequency\n• Fixed PWM Frequency at 50kHz with Frequency Hopping to Solve ;

ONSEMI

安森美半导体

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 100A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converter · Battery Chargers · Synchronous Rectification

文件：536.78 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon N Channel MOS FET

Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching

文件：82.98 Kbytes 页数：7 Pages

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