Silicon N Channel MOS FET

Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching

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瑞萨

Silicon N-Channel MOS FET

Application\nHigh speed power switching\n\n •  High breakdown voltage VDSS= 1500 V\n•  Low drive current\n•  Suitable for switching regulator, DC-DC converter and motor driver;

HITACHI

日立

Micropower, 600kHz PWM DC/DC Converters

文件：447.14 Kbytes 页数：16 Pages

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凌力尔特

Available in MiniDiP, TO-220, and TO-3 Packages

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凌力尔特