HybridPACK™ Drive Module

Electrical Features •Blocking voltage 750V •Low VCEsat •Low Switching Losses •Low Qg and Crss •Low Inductive Design •Tvj op = 150°C •Short-time extended Operation Temperature Tvj op = 175°C Mechanical Features •4.2kV DC 1sec Insulation •High Creepage and Clearance Distances •Compact

文件：2.08236 Mbytes 页数：16 Pages

Infineon

英飞凌

HybridPACK™ Drive Module

1 Features / Description HybridPACK™ Drive module with EDT2 IGBT and Diode Electrical Features •Blocking voltage 750V •Low VCEsat •Low Switching Losses •Low Qg and Crss •Low Inductive Design •Tvj op = 150°C •Short-time extended Operation Temperature Tvj op = 175°C Mechanical Feature

文件：1.88153 Mbytes 页数：16 Pages

Infineon

英飞凌

HybridPACK™ Drive Module

Electrical Features •Blocking voltage 750V •Low VCEsat •Low Switching Losses •Low Qg and Crss •Low Inductive Design •Tvj op = 150°C •Short-time extended Operation Temperature Tvj op = 175°C Mechanical Features •4.2kV DC 1sec Insulation •High Creepage and Clearance Distances •Compact

文件：7.72332 Mbytes 页数：16 Pages

Infineon

英飞凌

HybridPACK™ Drive Module

Electrical Features •Blocking voltage 750V •Low VCEsat •Low Switching Losses •Low Qg and Crss •Low Inductive Design •Tvj op = 150°C •Short-time extended Operation Temperature Tvj op = 175°C Mechanical Features •4.2kV DC 1sec Insulation •High Creepage and Clearance Distances •Compact

文件：7.72332 Mbytes 页数：16 Pages

Infineon

英飞凌

Dual N-Channel Enhancement Mode Power MOSFET

文件：767.61 Kbytes 页数：6 Pages

Fortune

富晶电子

Dual N-Channel Enhancement Mode Power MOSFET

文件：758.27 Kbytes 页数：6 Pages

Fortune

富晶电子

Power-Automotive IGBT Modules

HybridPACK™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications.\n Find appropriate Automotive EiceDRIVER™. • Blocking Voltage 750V\n• Low VCEsat\n• Low Switching Losses\n• Low QGand Cres\n• Low Inductive Design\n• Tvj op = 150°C\n• Short-time extended Operation Temperature T vj op = 175°C\n\n优势:\n• Compact Design\n• Direct Cooled Base Plate\n• Guiding elements for PCB and cooles assembly\n• Integrated NT;

Infineon

英飞凌

Dual N-Channel Enhancement Power Mosfet

Techpublic

台舟电子

750 V、820 A 六片式汽车级 IGBT 模块

Infineon

英飞凌

Package：模块；包装：管件 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MODULE PACK DRV HYBRIDD-1

Infineon

英飞凌