MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 250V ● rDS (ON) (MAX) ..............................................................0.20Ω ● ID ...........................................................................

文件：93.65 Kbytes 页数：5 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.20Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：279.38 Kbytes 页数：2 Pages

ISC

无锡固电

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：314.2 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：314.2 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：314.2 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：314.2 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：314.2 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：314.2 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：314.2 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 600V ● rDS (ON) (MAX) .............................................................. 0.43Ω ● ID ......................................................................................

文件：49.55 Kbytes 页数：4 Pages

POWEREX