20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：310.05 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：310.05 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：310.05 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ......................................................................................

文件：84.69 Kbytes 页数：5 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.59 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ......................................................................................

文件：44.94 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ......................................................................................

文件：50.16 Kbytes 页数：4 Pages

POWEREX

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 200V ● rDS (ON) (MAX) ............................................................. 0.18Ω ● ID ...........................................................................

文件：45.17 Kbytes 页数：4 Pages

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.53 Kbytes 页数：2 Pages

ISC

无锡固电

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 250V ● rDS (ON) (MAX) ..............................................................0.20Ω ● ID ...........................................................................

文件：23.91 Kbytes 页数：2 Pages

POWEREX