Non contact Switches

文件：90.53 Kbytes 页数：4 Pages

ALLEN-BRADLEY

12A, 100V, 0.195 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：48.95 Kbytes 页数：6 Pages

INTERSIL

12A, 100V, 0.195 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：48.95 Kbytes 页数：6 Pages

INTERSIL

12A, 100V, 0.195 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：48.95 Kbytes 页数：6 Pages

INTERSIL

17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：54.95 Kbytes 页数：6 Pages

INTERSIL

17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：54.95 Kbytes 页数：6 Pages

INTERSIL

17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：54.95 Kbytes 页数：6 Pages

INTERSIL

DIODE MODULE竊뉶.R.D.

DIODE MODULE（F.R.D.） FRS150BA50 is a high speed（fast recovery） isolated diode module designed for high power switching application. FRS150BA50 is suitable for high frequency application requiring low loss and high speed control. ● High Speed trr≦200ns ● IF（AV） 150A ● Isolated Mounting base. ●

文件：95.51 Kbytes 页数：2 Pages

SANREX

三社

FIXED FUSIBLE RESISTORS

文件：570.2 Kbytes 页数：1 Pages

ABCO

1.0 Amp FAST RECOVERY RECTIFIERS Mechanical Dimensions

文件：125.85 Kbytes 页数：2 Pages

FCI

富加宜