17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

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INTERSIL

17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs

Renesas

瑞萨

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

文件：115.69 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

POWER TRANSISTORS(10A,60-100V,125W)

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MOSPEC

统懋

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

文件：204.61 Kbytes 页数：4 Pages

MOSPEC

统懋