isc N-Channel MOSFET Transistor

DESCRIPTION •27A, 200V, RDS(on) = 0.1Ω •Second Generation Rad Hard MOSFET Results From New Design Concepts APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also di

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27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：48.53 Kbytes 页数：6 Pages

INTERSIL

27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：48.53 Kbytes 页数：6 Pages

INTERSIL

27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：48.53 Kbytes 页数：6 Pages

INTERSIL

27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs

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