50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

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INTERSIL

50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs

Renesas

瑞萨

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

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MOTOROLA

摩托罗拉

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

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MOTOROLA

摩托罗拉

POWER TRANSISTORS(10A,320-380V,125W)

文件：143.87 Kbytes 页数：3 Pages

MOSPEC

统懋