Super Junction MOSFET

Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss. • Very high commutation ruggedness. • Qualified for industrial grade applications according to JEDEC. Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for Adapter, LCD TV, Lighting, and

文件：861.25 Kbytes 页数：7 Pages

GWSEMI

唯圣电子

25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：49.22 Kbytes 页数：6 Pages

INTERSIL

25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：49.22 Kbytes 页数：6 Pages

INTERSIL

25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：49.22 Kbytes 页数：6 Pages

INTERSIL

23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs

Features • 23A, 200V, RDS(on) = 0.115Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma     - Meets Pre-Rad Specifications to 100KRAD(Si)     - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)     - Performance Permits Limited Use to 3000KRAD(Si) • Gamma

文件：49.37 Kbytes 页数：6 Pages

INTERSIL

23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs

Features • 23A, 200V, RDS(on) = 0.115Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma     - Meets Pre-Rad Specifications to 100KRAD(Si)     - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)     - Performance Permits Limited Use to 3000KRAD(Si) • Gamma

文件：49.37 Kbytes 页数：6 Pages

INTERSIL

23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs

Features • 23A, 200V, RDS(on) = 0.115Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma     - Meets Pre-Rad Specifications to 100KRAD(Si)     - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)     - Performance Permits Limited Use to 3000KRAD(Si) • Gamma

文件：49.37 Kbytes 页数：6 Pages

INTERSIL

17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

文件：49.11 Kbytes 页数：6 Pages

INTERSIL

17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

文件：49.11 Kbytes 页数：6 Pages

INTERSIL

17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

文件：49.11 Kbytes 页数：6 Pages

INTERSIL