Super Junction MOSFET

Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss. • Very high commutation ruggedness. • Qualified for industrial grade applications according to JEDEC. Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for Adapter, LCD TV, Lighting, and

文件：861.25 Kbytes 页数：7 Pages

GWSEMI

唯圣电子

PolarHV HiPerFET Power MOSFET ISOPLUS220

文件：207.62 Kbytes 页数：2 Pages

IXYS

艾赛斯

PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density

文件：176.36 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：372.1 Kbytes 页数：2 Pages

ISC

无锡固电