MDHT4N20Y

N-ChannelMOSFET200V,0.85A,1.35(ohm)

MDHT4N20YURH

N-ChannelMOSFET200V,0.85A,1.35(ohm)

MTD4N20D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

MTD4N20E

TMOSPOWERFET4.0AMPERES200VOLTSRDS(on)=1.2OHM

MTD4N20E

N?묬hannelDPAKPowerMOSFET

MTD4N20I

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

NDT4N20L

N-ChannelMOSFET

P4N20

N-CHANNEL200V-1.3ohm-4ATO-220POWERMOSTRANSISTOR

N-CHANNEL200V-1.3Ω-4ATO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.3Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■150oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPE

STD4N20

N-CHANNEL200V-1.2ohm-4ADPAK/IPAKMESHOVERLAY??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STP4N20

N-CHANNEL200V-1.3ohm-4ATO-220POWERMOSTRANSISTOR

N-CHANNEL200V-1.3Ω-4ATO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.3Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■150oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPE