Dual N & P-Channel, Logic Level MOSFET

General Description These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

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FAIRCHILD

仙童半导体

分立式 MOSFET

These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener • N-Channel1.3 A, 60 VRDS(ON) = 0.55 Ω @ VGS = 10 V RDS(ON) = 0.65 Ω @ VGS = 5 V\n• P-Channel-0.3 A, -300 VRDS(ON) = 15.5 Ω @ VGS = -10 V RDS(ON) = 16 Ω @ VGS = -5 V\n• Low Gate Charge (Typ. N-Channel 1.6 nC)         (Typ. P-Channel 3.6 nC)\n• Fast Switching Speed\n• Improved dv/dt Capability;

ONSEMI

安森美半导体

Surge Clamping, Overvoltage Transient Suppressor, Unidirectional

Description: The NTE4900 is a zener overvoltage transient suppressor in an axial lead type package designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener impedance, and fast resp

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NTE

High Efficiency LED in 3 mm Clear Package

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VISHAYVishay Siliconix

威世威世科技公司

300mW at 3.3V SUPPLY AUDIO POWER AMPLIFIER WITH STANDBY MODE ACTIVE HIGH

DESCRIPTION The TS4900 is an audio power amplifier designed to provide the best price to power ratio while preserving high audio quality. ■ OPERATING FROM VCC = 2.5V to 5.5V ■ 0.7W OUTPUT POWER @ Vcc=5V, THD=1, f=1kHz, with an 8 Ω load ■ 0.3W OUTPUT POWER @ Vcc=3.3V, THD=1, f=1k

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STMICROELECTRONICS

意法半导体