FQS4900数据手册ONSEMI中文资料规格书

描述 Description

These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and communication mode. This device is well suited for high interface in telephone sets.

特性 Features

• N-Channel1.3 A, 60 VRDS(ON) = 0.55 Ω @ VGS = 10 V RDS(ON) = 0.65 Ω @ VGS = 5 V
• P-Channel-0.3 A, -300 VRDS(ON) = 15.5 Ω @ VGS = -10 V RDS(ON) = 16 Ω @ VGS = -5 V
• Low Gate Charge (Typ. N-Channel 1.6 nC)         (Typ. P-Channel 3.6 nC)
• Fast Switching Speed
• Improved dv/dt Capability

应用 Application

• High Interface
• Telephone Sets