FQP34N20LMOS(场效应管)技术资料参数批发采购-114ic电子网

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FQA34N20	文件：731.39 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQA34N20	文件：362.52 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=34A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQA34N20L	文件：362.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=34A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQA34N20L	文件：666.86 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQAF34N20	文件：420.71 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.075Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQAF34N20	文件：718.57 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •23A,200V,RDS(on)=0.075Ω@VGS=10V •Lowgatecharge(typical60nC) •LowCrss(typical55pF) •Fastswitching	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQAF34N20L	文件：658.66 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB34N20	文件：769.68 Kbytes Page：9 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB34N20	文件：316.9 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=31A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB34N20L	文件：287.91 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=31A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.080Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB34N20L	文件：661.92 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI34N20	文件：769.68 Kbytes Page：9 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI34N20L	文件：661.92 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP34N20	文件：732.05 Kbytes Page：8 Pages	200VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP34N20	文件：302.07 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=31A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.075Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQP34N20	文件：944.26 Kbytes Page：7 Pages	N-Channel200V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
FQP34N20L	文件：676.01 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF34N20	文件：721.21 Kbytes Page：8 Pages	200VN-ChannelMOSFET Features •17.5A,200V,RDS(on)=0.075Ω@VGS=10V •Lowgatecharge(typical60nC) •LowCrss(typical55pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF34N20	文件：277.79 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=17.5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.075Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQPF34N20L	文件：318.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=17.5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.075Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宝隆宏业科技有限公司	FQP34N20LMOS(场效应管)	FAIRCHILD/仙童	2122+	TO-220	36980	只做原装,支持样品,假一罚十	询价
深圳市吉利鑫科技发展有限公司	FQP34N20LMOS(场效应管)	FAIRCHILD/仙童	22+	TO-220	10000	绝对原装现货热卖	询价
深圳市亿顺芯科技有限公司	FQP34N20LMOS(场效应管)	FAIRCHILD/仙童	2022+	TO-220	57550		询价
深圳市特莱科技有限公司	FQP34N20MOS	FAIRCHILD/仙童	24+23+	TO-220	12580	16年电子元件现货供应商终端BOM表可配单提供样品	询价
深圳市雅芯通科技有限公司	FQP34N20MOS	ON/安森美	24+	N/A	5000	只做原装正品现货	询价
深圳兆威电子有限公司	FQP34N20MOS(场效应管)	FAIRCHILD/仙童	23+	TO-220	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市国宇半导体科技有限公司	FQP34N20MOS(场效应管)	FAIRCHILD/仙童	23+	TO-220	22000	好质量好价格好漂亮保上机90天	询价
深圳市威尔健半导体有限公司	FQP34N20MOS(场效应管)	FAIRCHILD/仙童	23+	TO-220	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	FQP34N20MOS(场效应管)	FAIRCHILD/仙童	2022	TO-220	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市科恒伟业电子有限公司	FQP34N20MOS(场效应管)	FAIRCHILD/仙童	21+	TO-220	9852	只做原装正品现货!或订货假一赔十!	询价

更多FQP34N20LMOS(场效应管)供应商更新时间2024-6-9 10:56:00

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