600V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：677.13 Kbytes 页数：8 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，QFET®，600 V，0.3 A，11.5 Ω，TO-92

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •0.3A, 600V, RDS(on)= 11.5Ω（最大值）@VGS = 10 V, ID = 0.15A栅极电荷低（典型值：4.8nC)\n•低 Crss（典型值3.5pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

QFET N-CHANNEL

FEATURES • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON): 9.3Ω (Typ.)

文件：519.409 Kbytes 页数：8 Pages

Fairchild

仙童半导体

600V N-Channel MOSFET

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：65.34 Kbytes 页数：1 Pages

TGS

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：542.04 Kbytes 页数：8 Pages

Fairchild

仙童半导体