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FQD17P06TM

丝印:FQD17P06;Package:TO-252;-60V P-Channel MOSFET

Description This advanced MOSFET technology has been es pecially tailored to reduce on-st ate resistance, and to provi de super ior sw itching performa nce and high avala nche energy strength . These device s are suitable for switched mode powe r supplies , audio ampl ifier, DC motor control,

文件:1.11728 Mbytes 页数:7 Pages

EVVOSEMI

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FQD17P06TM

丝印:FQD17P06;Package:TO-252;-60V P-Channel MOSFET

Description This advanced MOSFET technology has been es pecially tailored to reduce on-st ate resistance, and to provi de super ior sw itching performa nce and high avala nche energy strength . These device s are suitable for switched mode powe r supplies , audio ampl ifier, DC motor control,

文件:1.11728 Mbytes 页数:7 Pages

EVVOSEMI

翊欧

FQD17P06

-60V P-Channel MOSFET

Description This advanced MOSFET technology has been es pecially tailored to reduce on-st ate resistance, and to provi de super ior sw itching performa nce and high avala nche energy strength . These device s are suitable for switched mode powe r supplies , audio ampl ifier, DC motor control,

文件:1.11728 Mbytes 页数:7 Pages

EVVOSEMI

翊欧

FQD17P06

60V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件:682.2 Kbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD17P06

P-Channel QFET짰 MOSFET -60 V, -12 A, 135 m廓

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件:1.44351 Mbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD17P06TM

P-Channel QFET짰 MOSFET -60 V, -12 A, 135 m廓

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件:1.44351 Mbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD17P06TM

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

文件:912.3 Kbytes 页数:4 Pages

Bychip

百域芯

FQD17P06

P-Channel QFET MOSFET

文件:892.15 Kbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD17P06_09

60V P-Channel MOSFET

文件:812.35 Kbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD17P06_13

P-Channel QFET MOSFET

文件:892.15 Kbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    FQD17P06

  • 功能描述:

    MOSFET 60V P-Channel QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ON
11+18+
TO-252
4335
原装正品现货 特价支持实单
询价
ONSEMI/安森美
25+
TO-252-3SC-63
32360
ONSEMI/安森美全新特价FQD17P06TM即刻询购立享优惠#长期有货
询价
ONSEMI
2021
NA
5000
全新原装!优势库存热卖中!
询价
ON/安森美
24+
TO-252
28303
只做原厂渠道 可追溯货源
询价
ON/安森美
22+
DPAK-3
9854
原装正品现货假一罚十
询价
ON
23+
TO252
2500
正规渠道,只有原装!
询价
ON/安森美
22+
DPAK-3
15000
原装正品
询价
ON
25+
TO252
6000
全新原装现货、诚信经营!
询价
ON(安森美)
2023+
DPAK
4550
全新原装正品
询价
ON/安森美
24+
TO252
9548
原厂可订货,技术支持,直接渠道。可签保供合同
询价
更多FQD17P06供应商 更新时间2025-9-20 15:02:00