首页 >FQB7N60TM_WS>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

IXGA7N60B

HiPerFASTIGBT

Features •Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB •MediumfrequencyIGBT •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Uninterruptiblepowersupplies(UPS) •

IXYS

IXYS Corporation

IXGA7N60C

HiPerFASTIGBTLightspeedSeries

Features •Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB •HighfrequencyIGBT •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Uninterruptiblepowersupplies(UPS) •Switc

IXYS

IXYS Corporation

IXGP7N60B

HiPerFASTIGBT

Features •Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB •MediumfrequencyIGBT •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Uninterruptiblepowersupplies(UPS) •

IXYS

IXYS Corporation

IXGP7N60C

HiPerFASTIGBTLightspeedSeries

Features •Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB •HighfrequencyIGBT •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Uninterruptiblepowersupplies(UPS) •Switc

IXYS

IXYS Corporation

IXTA7N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTA7N60P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTA7N60PM

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Plasticovermoldedtabforelectrical isolation •Internationalstandardpackage •Avanlancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings Appli

IXYS

IXYS Corporation

IXTP7N60P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTP7N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTP7N60PM

iscN-ChannelMOSFETTransistor

•FEATURES •DrainSourceVoltage- :VDSS=600V(Min) •Staticdrain-sourceon-resistance :RDS(on)≤1.1Ω@VGS=10V •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATION •DC/DCConverter •Idealforhigh-frequenc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    FQB7N60TM_WS

  • 功能描述:

    MOSFET 600V 7.4A 1Ohm N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Fairchild
1930+
N/A
800
加我qq或微信,了解更多详细信息,体验一站式购物
询价
Fairchild
22+
NA
800
加我QQ或微信咨询更多详细信息,
询价
Fairchild/ON
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
询价
FAIRCHILD仙童
23+
D2PAK
32365
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ON Semiconductor
2022+
TO-263-3,D2Pak(2 引线 + 接片
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
Fairchild
23+
33500
询价
onsemi(安森美)
24+
TO263
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
FAIRCHILD/仙童
22+
D2PAK
25000
只做原装进口现货,专注配单
询价
Fairchild/ON
23+
TO2633 D2Pak (2 Leads + Tab) T
8000
只做原装现货
询价
Fairchild仙童
25+
D2PAK
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多FQB7N60TM_WS供应商 更新时间2025-7-18 10:18:00