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IXGA7N60C

HiPerFAST IGBT Lightspeed Series

Features •Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB •HighfrequencyIGBT •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Uninterruptiblepowersupplies(UPS) •Switc

IXYS

IXYS Integrated Circuits Division

IXGA7N60C

包装:卷带(TR) 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 14A 54W TO263

IXYS

IXYS Integrated Circuits Division

IXGA7N60CD1

HiPerFAST IGBT with Diode Lightspeed Series

Features •Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB •HighfrequencyIGBT •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Uninterruptiblepowersupplies(UPS) •Switc

IXYS

IXYS Integrated Circuits Division

IXGA7N60CD1

包装:卷带(TR) 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 14A 75W TO263

IXYS

IXYS Integrated Circuits Division

7N60

7.4Amps,600VoltsN-CHANNELMOSFET

■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

7N60

iscN-ChannelMosfetTransistor

•DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirem

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

7N60

7Amps竊?00VoltsN-ChannelMOSFET

■Description TheET7N60N-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. ■Features ●RDS(ON)=1.20Ω@VGS=10V ●Lowgatecha

ESTEKEstek Electronics Co. Ltd

Estek Electronics Co. Ltd

7N60

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

7N60

7A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

7N60

7A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

7N60

7A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

7N60

7A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

7N60

7.4A,600VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

7N60

N-ChannelPowerMOSFET

DESCRIPTION TheNell7N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof7A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof600V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplications.suchasswitchedmodepowersu

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

7N60

600VN-ChannelPowerMOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

7N60

N-CHANNELPOWERMOSFET

■DESCRIPTION 7N607N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswitch

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

7N60

7Amps,600VoltsN-CHANNELMOSFET

FEATURE ●7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

7N60

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

7N60

N-CHANNELPOWERMOSFET

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

7N60A

7A,600VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

产品属性

  • 产品编号:

    IXGA7N60C

  • 制造商:

    IXYS

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 系列:

    HiPerFAST™, Lightspeed™

  • 包装:

    卷带(TR)

  • IGBT 类型:

    PT

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.7V @ 15V,7A

  • 开关能量:

    70µJ(开),120µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    9ns/65ns

  • 测试条件:

    480V,7A,22 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-263-3,D²Pak(2 引线 + 接片),TO-263AB

  • 供应商器件封装:

    TO-263AA

  • 描述:

    IGBT 600V 14A 54W TO263

供应商型号品牌批号封装库存备注价格
IXYS
23+
TO-263
12300
全新原装真实库存含13点增值税票!
询价
IXYS/艾赛斯
17+
TO-263(D2PAK)
31518
原装正品 可含税交易
询价
IXYS
08+(pbfree)
TO-263(D2PAK)
8866
询价
IXYS
23+
TO-263(D2PAK
8600
全新原装现货
询价
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
23+
N/A
59210
正品授权货源可靠
询价
JINGDAO/晶导微
23+
GBJ
69820
终端可以免费供样,支持BOM配单!
询价
IXYS/艾赛斯
23+
TO-263(D2PAK)
90000
只做原厂渠道价格优势可提供技术支持
询价
IXYS/艾赛斯
23+
TO-263
10000
公司只做原装正品
询价
IXYS
21+
TO263 (IXGA)
13880
公司只售原装,支持实单
询价
更多IXGA7N60C供应商 更新时间2024-5-24 9:03:00