2-WATT POWER PHEMT

DESCRIPTION AND APPLICATIONS The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimiz

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FILTRONIC

EconoPIM2 module with trench/fieldstop IGBT3 and Emitter Controlled 3 diode

EconoPIM™2 module with trench/fieldstop IGBT3 and Emitter Controlled 3 diode

文件：349.55 Kbytes 页数：11 Pages

INFINEON

英飞凌

IGBT-inverter

IGBT-modules IGBT-inverter diode-inverter IGBT-brake-chopper

文件：391.71 Kbytes 页数：11 Pages

EUPEC

IGBT-modules

IGBT-modules IGBT-inverter diode-inverter IGBT-brake-chopper

文件：408.42 Kbytes 页数：11 Pages

EUPEC

10AX 4G 2-way Switch - Brushed Brass

DESCRIPTION 10AX 4G 2-way Switch - Brushed Brass

文件：218.06 Kbytes 页数：1 Pages

KNIGHTSBRIDGE

10AX 4G 2-way Switch - Gunmetal

DESCRIPTION 10AX 4G 2-way Switch - Gunmetal

文件：164.28 Kbytes 页数：1 Pages

KNIGHTSBRIDGE

10AX 4G 2-way Switch - Polished Brass

DESCRIPTION 10AX 4G 2-way Switch - Polished Brass

文件：174.29 Kbytes 页数：1 Pages

KNIGHTSBRIDGE

10AX 4G 2-way Switch - Pearl

DESCRIPTION 10AX 4G 2-way Switch - Pearl

文件：173.53 Kbytes 页数：1 Pages

KNIGHTSBRIDGE

Double Differential Magneto Resistor

Features • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage • Compact construction • Available in strip form for automatic assembly Typical applications • Incremental angular encoders • Detection o

文件：201.65 Kbytes 页数：4 Pages

SIEMENS

西门子

Differential Magneto Resistor

The differential magneto resistor FP 412 D 250 is a magnetically variable resistor in D-type InSb/NiSb semiconductor material. The MR is glued onto a ferrite substrate and is supplied in a MICROPACK copper/polyimide film package. The basic resistance of each of the magneto resistors is 250 Ω. The

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SIEMENS

西门子