丝印：3184；Package：DIP8-Pin；3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Features ■ High noise immunity characterized by 50kV/μs (Typ.) common mode rejection @ VCM = 2,000V ■ Guaranteed operating temperature range of -40°C to +100°C ■ 3A peak output current for medium power MOSFET/IGBT ■ Fast switching speed – 210ns max. propagation delay – 65ns max pulse width d

文件：889.91 Kbytes 页数：26 Pages

ONSEMI

安森美半导体

3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

文件：746.45 Kbytes 页数：23 Pages

Fairchild

仙童半导体

3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

文件：658.29 Kbytes 页数：23 Pages

DIODES

美台半导体

3A 输出电流，高速 MOSFET/IGBT 门极驱动器光耦合器

FOD3184是输出电流为3A的高速MOSFET/IGBT栅极驱动光耦合器。 它由铝砷化镓(AlGaAs)发光二极管(LED)组成，该二极管与具有PMOS和NMOS输出功率晶体管集成电路功率级的CMOS感测器进行光耦合。 它非常适用于等离子显示板(PDP)中使用的高频驱动的功率MOSFETS/IGBT、电机控制逆变器以及高性能的DC-DC转换器中。该器件封装在8引脚双列直插式外壳内，兼容260°C回流焊接工艺，符合无铅焊接的规定。 • 具有35kV/µs共模抑制特点的高抗噪能力\n• 保证工作温度范围为-40°C至100°C\n• 为中等功率的MOSFET/IGBT提供最低3A的峰值输出电流\n• 快速开关速度\n• 210ns（最大值） 传播延迟\n• 65ns（最大值） 脉宽失真度\n• 快速输出上升/下降时间\n• 提供较低的动态功耗\n• 250kHZ最大开关速度广泛的V\n• CC工作电压范围，从15V至30V\n• 使用P沟道MOSFET作为输出级可使输出电压摆幅接近供电轨（轨到轨输出）\n• 带滞后的欠压闭锁保护(UVLO) - 优化用于驱动IGBT\n• 安全和法规认证\n• 1分钟UL1577，3,75;

ONSEMI

安森美半导体

3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Diodes

美台半导体

丝印：3184；Package：SMT8-Pin；3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Features ■ High noise immunity characterized by 50kV/μs (Typ.) common mode rejection @ VCM = 2,000V ■ Guaranteed operating temperature range of -40°C to +100°C ■ 3A peak output current for medium power MOSFET/IGBT ■ Fast switching speed – 210ns max. propagation delay – 65ns max pulse width d

文件：889.91 Kbytes 页数：26 Pages

ONSEMI

安森美半导体

丝印：3184；Package：SMT8-Pin；3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Features ■ High noise immunity characterized by 50kV/μs (Typ.) common mode rejection @ VCM = 2,000V ■ Guaranteed operating temperature range of -40°C to +100°C ■ 3A peak output current for medium power MOSFET/IGBT ■ Fast switching speed – 210ns max. propagation delay – 65ns max pulse width d

文件：889.91 Kbytes 页数：26 Pages

ONSEMI

安森美半导体

丝印：3184；Package：SMT8-Pin；3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Features ■ High noise immunity characterized by 50kV/μs (Typ.) common mode rejection @ VCM = 2,000V ■ Guaranteed operating temperature range of -40°C to +100°C ■ 3A peak output current for medium power MOSFET/IGBT ■ Fast switching speed – 210ns max. propagation delay – 65ns max pulse width d

文件：889.91 Kbytes 页数：26 Pages

ONSEMI

安森美半导体

丝印：3184；Package：SMT8-Pin；3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Features ■ High noise immunity characterized by 50kV/μs (Typ.) common mode rejection @ VCM = 2,000V ■ Guaranteed operating temperature range of -40°C to +100°C ■ 3A peak output current for medium power MOSFET/IGBT ■ Fast switching speed – 210ns max. propagation delay – 65ns max pulse width d

文件：889.91 Kbytes 页数：26 Pages

ONSEMI

安森美半导体

丝印：3184；Package：SMT8-Pin；3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Features ■ High noise immunity characterized by 50kV/μs (Typ.) common mode rejection @ VCM = 2,000V ■ Guaranteed operating temperature range of -40°C to +100°C ■ 3A peak output current for medium power MOSFET/IGBT ■ Fast switching speed – 210ns max. propagation delay – 65ns max pulse width d

文件：889.91 Kbytes 页数：26 Pages

ONSEMI

安森美半导体