首页 >FMV12N50ES>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFET500V,11.5A,0.65(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET500V,11.5A,0.65(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET500V,11.5A,0.65(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET500V,11.5A,0.65(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET500V,11.5A,0.75ohm | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET500V,11.5A,0.75ohm | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET500V,11.5A,0.65(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Features •Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Rev | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Features •Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Rev | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Lowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Comput | VishayVishay Siliconix 威世科技 | Vishay | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Lowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Computing | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFETs FEATURES •LowFigure-of-MeritRonxQg •100AvalancheTested •GateChargeImproved •Trr/QrrImproved •ComplianttoRoHSDirective2002/95/EC | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •LowFigure-of-MeritRonxQg •100AvalancheTested •GateChargeImproved •Trr/QrrImproved •ComplianttoRoHSDirective2002/95/EC | VishayVishay Siliconix 威世科技 | Vishay | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Lowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Comput | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
FMV12N50ES
- 制造商：
FUJI
- 制造商全称：
Fuji Electric
- 功能描述：
N-CHANNEL SILICON POWER MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FUJITSU |
2016+ |
TO-220F |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
FUJI进口原 |
17+ |
TO-220F |
6200 |
询价 | |||
FUJI |
2020+ |
TO-220F |
49 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
24+ |
TO-220F |
5000 |
全现原装公司现货 |
询价 | |||
FUJI |
23+ |
TO-220F |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
23+ |
N/A |
90450 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-220F(SLS) |
55000 |
绝对原装正品假一罚十! |
询价 | ||
FUJI |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
FUJITSU/富士通 |
21+ |
TO220F |
19000 |
只做正品原装现货 |
询价 | ||
FUJITSU |
21+ |
TO220F |
114 |
原装现货假一赔十 |
询价 |
相关规格书
更多- FMV12N50ESC-P
- FMV12N60ES
- FMV13N60E
- FMV13N60ESC-P
- FMV16N50E
- FMV16N50ESC-P
- FMV16N60E
- FMV16N60ESC-P
- FMV19N60E
- FMV20N50E
- FMV20N60S1
- FMV22
- FMV23N50ES
- FMV2C12100
- FMV-3FU
- FMV-3GULF730
- FMV-563
- FMV-563XMT
- FMV-564RCV
- FMV-567
- FMV-574D2
- FMV-574RCV
- FMV-586
- FMV-586XMT
- FMV-593_1
- FMV-593XMT
- FMV-595_1
- FMV-595XMT
- FMV-603_1
- FMV-603XMT
- FMV-G2GS
- FMVKB412
- FMVMY400/480-76-S828-FA
- FMVSY250/TT-76
- FMW.3K.93C.CLMT96Z
- FMW.3K.93C.TLMC96Z
- FMW1
- FMW10
- FMW-150-0001-Z
- FMW17W2S5R-K121
- FMW1T148
- FMW-200-0001
- FMW-2106
- FMW-2156
- FMW-2206
相关库存
更多- FMV12N50ESSC-P
- FMV12N60ESSC-P
- FMV13N60ES
- FMV13N60ESSC-P
- FMV16N50ES
- FMV16N50ESSC-P
- FMV16N60ES
- FMV17N60ES
- FMV19N60ES
- FMV20N50ES
- FMV21N50ES
- FMV23N50E
- FMV24N25G
- FMV30N60S1
- FMV-3GU
- FMV5233FA5
- FMV-563RCV
- FMV-564
- FMV-564XMT
- FMV-574
- FMV-574D2RCV
- FMV-574XMT
- FMV-586RCV
- FMV-593
- FMV-593RCV
- FMV-595
- FMV-595RCV
- FMV-603
- FMV-603RCV
- FMVCJS25CEAS27.000MTR
- FMV-G5FS
- FMVMY250/TT-76
- FMVSY250/MT-76
- FMW.3K.112.CZZ
- FMW.3K.93C.TLMC96
- FMW.3K.93C.TLMT96Z
- FMW-1
- FMW-150
- FMW-150-0002-Z
- FMW17W2S-K121
- FMW2
- FMW20N60S1HF
- FMW2-150-10/Z
- FMW-2204
- FMW2-41-1/I
