首页 >FMMTL718TA>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IDTXOLVPECLCrystalOscillator | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
CERAMICRESONATORS ZTBSERIES700kHzto999kHz | EUROQUARTZEUROQUARTZ limited 石英公司 | EUROQUARTZ | ||
PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *6APeakpulsecurrent *ExcellenthFEcharacteristicsupto6A(pulsed) *lowsaturationvoltage *ICCont2.5A APPLICATIONS *PowerMOSFETgatedriverinconjunctionwithcomplementaryZTX618 | Zetex Zetex Semiconductors | Zetex | ||
PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *6APeakpulsecurrent *ExcellenthFEcharacteristicsupto6A(pulsed) *lowsaturationvoltage *ICCont2.5A APPLICATIONS *PowerMOSFETgatedriverinconjunctionwithcomplementaryZTX618 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
Super323SOT323PNPSILICONPOWER(SWITCHING)TRANSISTOR3APeakPulseCurrent Features •BVCEO>-20V •IC=-1AContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •LowSaturationVoltage-250mVMax@IC=-1A. •RCE(SAT)=200mΩ@1AforaLowEquivalentOn-Resistance •500mWPowerDissipation •ExcellenthFECharacteristicsupto3A •ComplementaryNPNT | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
Super323SOT323PNPSILICONPOWER(SWITCHING)TRANSISTOR Features •BVCEO>-20V •IC=-1AContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •LowSaturationVoltage-250mVMax@IC=-1A. •RCE(SAT)=200mΩ@1AforaLowEquivalentOn-Resistance •500mWPowerDissipation •ExcellenthFECharacteristicsupto3A •ComplementaryNPNT | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *500mWPOWERDISSIPATION *ICCONT1A *3APeakPulseCurrent *ExcellentHFECharacteristicsUpTo3A(pulsed) *ExtremelyLowSaturationVoltage *ExtremelyLowEquivalentOnResistance;RCE(sat) APPLICATIONS *SwitchfunctionsinLEDdisplaysandSatellitereceivers *Negativ | Zetex Zetex Semiconductors | Zetex | ||
Super323SOT323PNPSILICONPOWER(SWITCHING)TRANSISTOR3APeakPulseCurrent Features •BVCEO>-20V •IC=-1AContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •LowSaturationVoltage-250mVMax@IC=-1A. •RCE(SAT)=200mΩ@1AforaLowEquivalentOn-Resistance •500mWPowerDissipation •ExcellenthFECharacteristicsupto3A •ComplementaryNPNT | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-20V; •IC=-3.5AContinuousCollectorCurrent •RSAT=64mΩforLowEquivalentOnResistance •LowSaturationVoltage(-220mV@-1A) •hFEcharacterizedupto-6Aforhighcurrentgainholdsup •DualNPNsavingfootprintandcomponentcount •Lowprofile | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-20V; •IC=-3.5AContinuousCollectorCurrent •RSAT=64mΩforLowEquivalentOnResistance •LowSaturationVoltage(-220mV@-1A) •hFEcharacterizedupto-6Aforhighcurrentgainholdsup •DualNPNsavingfootprintandcomponentcount •Lowprofile | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEspecifiedupto-6Aforhighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJA | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEspecifiedupto-6Aforhighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJA | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEspecifiedupto-6Aforhighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJA | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
20VPNPLOWSATURATIONTRANSISTORAND FeaturesandBenefits PNPTransistor •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEcharacterizedupto-6Aforhighcurrentgainholdup SchottkyDiode •BVR>40 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
20VPNPLOWSATURATIONTRANSISTORAND FeaturesandBenefits PNPTransistor •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEcharacterizedupto-6Aforhighcurrentgainholdup SchottkyDiode •BVR>40 | DIODESDiodes Incorporated 达尔科技 | DIODES |
产品属性
- 产品编号:
FMMTL718TA
- 制造商:
Diodes Incorporated
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带
- 晶体管类型:
PNP
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
450mV @ 100mA,1.5A
- 电流 - 集电极截止(最大值):
10nA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
200 @ 500mA,2V
- 频率 - 跃迁:
265MHz
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
TO-236-3,SC-59,SOT-23-3
- 供应商器件封装:
SOT-23-3
- 描述:
TRANS PNP 20V 1A SOT23-3
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DIODES(美台) |
23+ |
SOT-23-3 |
8345 |
询价 | |||
Diodes Incorporated |
23+ |
TO-236-3,SC-59,SOT-23-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
DIODES(美台) |
23+ |
SOT-23 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
DIODES |
ROHS全新原装 |
原厂原包原封△ |
78000 |
原装代理经销特价原装现货小批量支持QQ350053121 |
询价 | ||
DIODES/美台 |
2019+ |
SOT23 |
78550 |
原厂渠道 可含税出货 |
询价 | ||
DIODES/美台 |
22+ |
SOT-23 |
600000 |
航宇科工半导体-央企优秀战略合作伙伴! |
询价 | ||
DIODES/美台 |
20+ |
SOT-23 |
120000 |
原装正品 可含税交易 |
询价 | ||
DIODES/美台 |
2021+ |
SOT-23 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
HYNIX/海力士 |
22+ |
TSOP |
10000 |
公司原装现货,欢迎咨询 |
询价 | ||
DIODES/美台 |
SOT23 |
7906200 |
询价 |
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