PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * Switch functions in LED displays and Satellite receivers * Negativ

文件：52.45 Kbytes 页数：3 Pages

ZETEX

Super323
SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR

Features • BVCEO > -20V • IC = -1A Continuous Collector Current • ICM = -3A Peak Pulse Current • Low Saturation Voltage -250mV Max @ IC = -1A. • RCE(SAT) = 200mΩ @ 1A for a Low Equivalent On-Resistance • 500mW Power Dissipation • Excellent hFE Characteristics up to 3A • Complementary NPN T

文件：62.85 Kbytes 页数：3 Pages

DIODES

美台半导体

Super323
SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR 3A Peak Pulse Current

Features • BVCEO > -20V • IC = -1A Continuous Collector Current • ICM = -3A Peak Pulse Current • Low Saturation Voltage -250mV Max @ IC = -1A. • RCE(SAT) = 200mΩ @ 1A for a Low Equivalent On-Resistance • 500mW Power Dissipation • Excellent hFE Characteristics up to 3A • Complementary NPN T

文件：62.85 Kbytes 页数：3 Pages

DIODES

美台半导体

PNP, 20V, 1A, SOT323

Diodes

美台半导体

Super323
SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR 3A Peak Pulse Current

Features • BVCEO > -20V • IC = -1A Continuous Collector Current • ICM = -3A Peak Pulse Current • Low Saturation Voltage -250mV Max @ IC = -1A. • RCE(SAT) = 200mΩ @ 1A for a Low Equivalent On-Resistance • 500mW Power Dissipation • Excellent hFE Characteristics up to 3A • Complementary NPN T

文件：62.85 Kbytes 页数：3 Pages

DIODES

美台半导体

20V PNP POWER SWITCHING TRANSISTOR IN SOT323

文件：806.56 Kbytes 页数：6 Pages

DIODES

美台半导体

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 1A SOT323

DIODES

美台半导体

Package：SC-70，SOT-323；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 1A SOT323

DIODES

美台半导体