SURFACE MOUNT FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere

文件：34.17 Kbytes 页数：3 Pages

RECTRON

丽正国际

Recovery Rectifiers

Rectron

丽正国际

FAST RECOVERY SILICON RECTIFIER

文件：101.46 Kbytes 页数：2 Pages

CHENMKO

力勤

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GSS4936 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features * Simple Drive Requirement * Low Gate Charge * Fast Switching

文件：312.2 Kbytes 页数：5 Pages

GTM

勤益投资控股

5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very lo

文件：152.88 Kbytes 页数：6 Pages

Fairchild

仙童半导体